Method for manufacturing semiconductor device
US7629243B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2006 |
| Grant date | Dec 8, 2009 |
| Priority date | — |
| Expiry date | Aug 28, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/681
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device is provided, which includes forming a gate insulating film on a semiconductor substrate, forming a first layer on the gate insulating film, the first layer containing a first p-type impurity and, an amorphous or polycrystalline formed of Si1-xGex (0≦x<0.25), subjecting the first layer to a first heat treatment wherein the first layer is heated for 1 msec or less at a temperature higher than 1100° C., forming a second layer on the first layer, the second layer containing a second p-type impurity and formed of amorphous silicon or polycrystalline silicon, the second p-type impurity having a smaller covalent bond radius than that of the first p-type impurity, and subjecting the second layer to a second heat treatment to heat the second layer at a temperature ranging from 800° C. to 1100° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.