Method for creating electrically conductive elements for semiconductor device structures using laser ablation processes and methods of fabricating semiconductor device assemblies
US7629250B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 17, 2006 |
| Grant date | Dec 8, 2009 |
| Priority date | — |
| Expiry date | Apr 30, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/014
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming at least one conductive element is disclosed. Particularly, a semiconductor substrate, including a plurality of semiconductor dice thereon, may be provided and a dielectric layer may be formed thereover. At least one depression may be laser ablated in the dielectric layer and an electrically conductive material may be deposited thereinto. Also, a method for assembling a semiconductor die having a plurality of bond pads and a dielectric layer formed thereover to a carrier substrate having a plurality of terminal pads is disclosed. At least one depression may be laser ablated into the dielectric layer and a conductive material may be deposited thereinto for electrical communication between the semiconductor die and the carrier substrate. The semiconductor die may be affixed to the carrier substrate and at least one of the dielectric layer and the conductive material may remain substantially solid during affixation therebetween. The methods may be implemented at the wafer level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.