Ultraviolet assisted porogen removal and/or curing processes for forming porous low k dielectrics
US7629272B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2005 |
| Grant date | Dec 8, 2009 |
| Priority date | — |
| Expiry date | Jul 18, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1047
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Processes for forming porous low k dielectric materials from low k dielectric films containing a porogen material include exposing the low k dielectric film to ultraviolet radiation. In one embodiment, the film is exposed to broadband ultraviolet radiation of less than 240 nm for a period of time and intensity effective to remove the porogen material. In other embodiments, the low k dielectric film is exposed to a first ultraviolet radiation pattern effective to increase a crosslinking density of the film matrix while maintaining a concentration of the porogen material substantially the same before and after exposure to the first ultraviolet radiation pattern. The low k dielectric film can be then be processed to form a metal interconnect structure therein and subsequently exposed to a second ultraviolet radiation pattern effective to remove the porogen material from the low k dielectrics film and form a porous low k dielectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.