Hybrid memory cell for spin-polarized electron current induced switching and writing/reading process using such memory cell
US7630231B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 27, 2007 |
| Grant date | Dec 8, 2009 |
| Priority date | — |
| Expiry date | Aug 27, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive hybrid memory cell includes first and second stacked structures. The first stacked structure includes a magnetic tunnel junction including first and second magnetic regions stacked in a parallel, overlying relationship separated by a layer of non-magnetic material, wherein the first magnetic region has a fixed first magnetic moment vector and the second magnetic region has a free second magnetic moment vector that is switchable between the same and opposite directions with respect to the fixed first magnetic moment vector. The second stacked structure is at least partly arranged in a lateral relationship with respect to the first stacked structure and includes a third magnetic region having a fixed third magnetic moment vector and the second magnetic region. The first and second structures are arranged between at least two electrodes in electrical contact therewith.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.