Patent · US Active

Approximating eigensolutions for use in determining the profile of a structure formed on a semiconductor wafer

US7630873B2 · kind B2 · utility

4Cited by

2References

39Claims

0Family size

Assignee

TOKYO ELECTRON LIMITED · JP

Inventors

Joerg Bischoff · Ilmenau, DE
Karl Hehl · Usedom, DE
Xinhui Niu · San Jose, US
Wen Jin · Fremont, US

Key dates

Filing date	Feb 26, 2003
Grant date	Dec 8, 2009
Priority date	—
Expiry date	Jul 21, 2027

Classification

Technology area (CPC G)Physics
CPC primaryG03F7/70625
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

Eigensolutions for use in determining the profile of a structure formed on a semiconductor wafer can be approximated by obtaining a known set of eigenvectors associated with a first section of a hypothetical profile of the structure, where the known set of eigenvectors is used to generate a simulated diffraction signal for the hypothetical profile. A known characteristic matrix associated with a second section of a hypothetical profile is obtained, and an approximated set of eigenvalues for the second section is determined based on the known set of eigenvectors associated with the first section and the known characteristic matrix associated with the second section.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.