Patent · US Active

Protection in integrated circuits

US7632737B2 · kind B2 · utility

2Cited by

35References

37Claims

0Family size

Assignee

Micron Technology, Inc. · US

Inventors

Neal R. Rueger · Boise, US
William Budge · Homedale, US
Weimin Li · Lo Wu, CN

Key dates

Filing date	Jul 17, 2006
Grant date	Dec 15, 2009
Priority date	—
Expiry date	Apr 4, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76235
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method including, prior to a plasma heat-up operation, forming a liner on structure coated with an insulator. And a method including forming a trench on a substrate, forming an insulator on the trench, and after forming a liner having a thickness of between about 50 angstroms and about 400 angstroms on the insulator, applying a plasma heat-up operation to the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.