Method and apparatus for measuring pattern dimensions
US7633061B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2008 |
| Grant date | Dec 15, 2009 |
| Priority date | — |
| Expiry date | May 28, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/143
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
It is difficult for a material having low resistance to electron beam irradiation to obtain an electron microscopic image having a high S/N ratio. A conventional image smoothing process can improve stability of measurement, but this process has a problem of measurement errors for absolute values, reduction of sensitivity, deterioration of quality of cubic shape information and the like. In the present invention, by performing an image averaging process without deteriorating cubic shape information of a signal waveform in consideration of dimension deviation of a measurement target pattern, measurement stability is compatible with improvement of precision and sensitivity. Accordingly, it is possible to realize measurement of pattern dimensions and shapes with high precision and control of a highly sensitive semiconductor manufacturing process using the measurement.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.