Programmable fuse/non-volatile memory structures in BEOL regions using externally heated phase change material

US7633079B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Kuang-Neng Chen · White Plains, US
• Bruce G. Elmegreen · Goldens Bridge, US
• Deok-kee Kim · Mount Kisco, US
• Chandrasekharan Kothandaraman · New York, US
• Lia Krusin-Elbaum · Dobbs Ferry, US
• Chung H. Lam · Williston, US
• Dennis M. Newns · Yorktown Heights, US
• Byeongju Park · Poughkeepsie, US
• Sampath Purushothaman · Yorktown Heights, US

Key dates

• Filing date: Sep 6, 2007
• Grant date: Dec 15, 2009
• Expiry date: May 29, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A programmable phase change material (PCM) structure includes a heater element formed at a BEOL level of a semiconductor device, the BEOL level including a low-K dielectric material therein; a first via in electrical contact with a first end of the heater element and a second via in electrical contact with a second end of the heater element, thereby defining a programming current path which passes through the first via, the heater element, and the second via; a PCM element disposed above the heater element, the PCM element configured to be programmed between a lower resistance crystalline state and a higher resistance amorphous state through the use of programming currents through the heater element; and a third via in electrical contact with the PCM element, thereby defining a sense current path which passes through the third via, the PCM element, the heater element, and the second via.