Semiconductor device having super junction structure
US7633123B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2006 |
| Grant date | Dec 15, 2009 |
| Priority date | — |
| Expiry date | Jun 6, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/60
Abstract
A semiconductor device includes: two main electrodes; multiple first regions; and multiple second regions. The first region having a first impurity concentration and a first width and the second region having a second impurity concentration and a second width are alternately repeated. A product of the first impurity concentration and the first width is equal to a product of the second impurity concentration and the second width. The first width is equal to or smaller than 4.5 μm. The first impurity concentration is lower than a predetermined concentration satisfying a RESURF condition. A ratio between on-state resistances of the device at 27° C. and at 150° C. is smaller than 1.8.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.