Patent · US Expired

Method for evaluating semiconductor wafer and apparatus for evaluating semiconductor wafer

US7633305B2 · kind B2 · utility

0Cited by
7References
4Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 12, 2005
Grant dateDec 15, 2009
Priority date
Expiry dateSep 12, 2025

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L22/14
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

The present invention is a method for evaluating a semiconductor wafer by measuring an electric characteristic of the semiconductor wafer by using a mercury electrode, wherein when the semiconductor wafer is held on a wafer chuck that the mercury electrode is formed in a holding surface of so that a side of a surface to be measured of the semiconductor wafer is set to a side of the wafer chuck, the semiconductor wafer is held on the wafer chuck whose diameter forming an outermost periphery of the holding surface is smaller than a diameter forming an outermost periphery of the surface to be measured of the semiconductor wafer, and then, the electric characteristic is measured by contacting the mercury electrode with the surface to be measured of the wafer, and an evaluation apparatus. Thereby, there can be provided an evaluation method and an evaluation apparatus for a semiconductor wafer by which when the semiconductor wafer is evaluated by measuring an electric characteristic thereof by using a mercury electrode, the semiconductor wafer can be high-precisely and effectively evaluated by setting a size of a holding surface of a wafer chuck to be smaller than that of a surface to be…

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.