Well for CMOS imager and method of formation
US7635604B2 · kind B2 · utility
2Cited by
16References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 14, 2005 |
| Grant date | Dec 22, 2009 |
| Priority date | — |
| Expiry date | Sep 12, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/014
Abstract
A well region of a first conductivity type located in a substrate of the first conductivity type and below about half the channel length of an electrically active portion of a transistor gate is disclosed. The well region is laterally displaced from a charge collection region of a second conductivity type of a pinned photodiode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.