Vapor drying method, apparatus and recording medium for use in the method
US7637029B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2006 |
| Grant date | Dec 29, 2009 |
| Priority date | — |
| Expiry date | Feb 18, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S134/902
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A vapor drying apparatus comprises a processing chamber 1a adapted to contain semiconductor wafers W; a supply nozzle 2 adapted to supply IPA vapor or N2 gas into the processing chamber 1a; a two-fluid nozzle 3 connected to both of an IPA supply source 8 and an N2 gas supply source 5 and adapted to produce a mixed fluid of IPA and N2 gas; a vapor generating apparatus 10 adapted to produce IPA vapor by heating the mixed fluid produced by the two-fluid nozzle 3; an N2 gas supply line 23 connected to the upstream side of the two-fluid nozzle 3; and a mixed fluid supply line 22 connected to the downstream side of the two-fluid nozzle 3. An open-and-close valve V2 is provided on a branch line 25 connecting the N2 gas supply line 23 and the mixed fluid supply line 22. First, N2 gas is supplied to the two-fluid nozzle 3 while IPA from the IPA supply source 8 is supplied to the two-fluid nozzle 3 so as to produce the mixed fluid, followed by supplying it to the processing chamber 1a so as to perform a first drying step. Subsequently, N2 gas from the N2 gas supply source 5 is supplied to the processing chamber 1a through the two-fluid nozzle 3 and the branch line 25 so as to perform a secon…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.