Silicon wafer, method for producing silicon wafer and method for growing silicon single crystal
US7637997B2 · kind B2 · utility
4Cited by
19References
21Claims
0Family size
Assignee
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Key dates
| Filing date | May 22, 2006 |
| Grant date | Dec 29, 2009 |
| Priority date | — |
| Expiry date | May 22, 2026 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B33/02
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A silicon single crystal is grown by the CZ method. A silicon melt from which the crystal is grown is added with dopant such that the crystal has a resistivity of 0.025 to 0.08 Ωcm. As well as the dopant, carbon is added to the silicon melt. The crystal is pulled in a hydrogen-bearing inert atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.