Low resistivity metal carbonitride thin film deposition by atomic layer deposition
US7638170B2 · kind B2 · utility
67Cited by
33References
22Claims
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Key dates
| Filing date | Jun 21, 2007 |
| Grant date | Dec 29, 2009 |
| Priority date | — |
| Expiry date | Jan 22, 2028 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45531
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Thermal atomic layer deposition processes are provided for growing low resistivity metal carbonitride thin films. Certain embodiments include methods for forming tantalum carbonitride (TaCN) thin films. In preferred embodiments, TaCN thin films with a resistivity of less than about 1000 μΩ·cm are grown from tantalum halide precursors and precursors that contribute both carbon and nitrogen to the growing film. Such precursors include, for example, hexamethyldisilazane (HMDS), tetramethyldisilazane (TMDS), bisdiethylaminosilane (BDEAS) and hexakis(ethylamino)disilane (HEADS).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.