Method of forming a semiconductor device and structure therefor
US7638385B2 · kind B2 · utility
1Cited by
20References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 2, 2005 |
| Grant date | Dec 29, 2009 |
| Priority date | — |
| Expiry date | Dec 29, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/403
Abstract
A method of forming a semiconductor device includes forming isolation trenches that are used to isolate some of the electrical elements such as transistors, diodes, capacitors, or resistors on a semiconductor die from other elements on the semiconductor die.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.