Manufacturing method of semiconductor-on-insulator region structures
US7638844B2 · kind B2 · utility
1Cited by
5References
55Claims
0Family size
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Key dates
| Filing date | Mar 2, 2007 |
| Grant date | Dec 29, 2009 |
| Priority date | — |
| Expiry date | Aug 27, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6758
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A single-crystal silicon region on insulator on silicon intended to receive at least one component, the insulator having overthicknesses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.