Techniques for forming shallow junctions
US7642150B2 · kind B2 · utility
5Cited by
13References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2007 |
| Grant date | Jan 5, 2010 |
| Priority date | — |
| Expiry date | Aug 14, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31701
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Techniques for forming shallow junctions are disclosed. In one particular exemplary embodiment, the techniques may be realized as a method for forming shallow junctions. The method may comprise generating an ion beam comprising molecular ions based on one or more materials selected from a group consisting of: digermane (Ge2H6), germanium nitride (Ge3N4), germanium-fluorine compounds (GFn, wherein n=1, 2, or 3), and other germanium-containing compounds. The method may also comprise causing the ion beam to impact a semiconductor wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.