Semiconductor device, method for manufacturing the same and method for evaluating the same
US7642178B2 · kind B2 · utility
10Cited by
3References
7Claims
0Family size
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Key dates
| Filing date | Sep 26, 2006 |
| Grant date | Jan 5, 2010 |
| Priority date | — |
| Expiry date | Oct 30, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device includes steps of: forming a first epitaxial film on a silicon substrate; forming a trench in the first epitaxial film; and forming a second epitaxial film on the first epitaxial film and in the trench. The step of forming the second epitaxial film includes a final step, in which a mixed gas of a silicon source gas and a halide gas is used. The silicon substrate has an arsenic concentration defined as α. The second epitaxial film has an impurity concentration defined as β. The arsenic concentration and the impurity concentration has a relationship of: α≦3×1019×ln(β)−1×1021.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.