Tunnel-effect type magnetic sensor having free layer including non-magnetic metal layer
US7643254B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2007 |
| Grant date | Jan 5, 2010 |
| Priority date | — |
| Expiry date | Jun 22, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3295
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A free magnetic layer of a tunnel-effect type magnetic sensor is formed on an insulating barrier layer made of Mg—O, and the free magnetic layer includes an enhancement layer, a first soft magnetic layer, a non-magnetic metal layer, and a second soft magnetic layer, which are laminated in that order from the bottom. For example, the enhancement layer is formed of Co—Fe, the first and the second soft magnetic layers are formed of Ni—Fe, and the non-magnetic metal layer is formed of Ta. The average thickness of the first soft magnetic layer is formed in the range of 5 to 60 Å. Accordingly, a high resistance change rate (ΔR/R) can be obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.