Self aligned memory element and wordline

US7645632B2 · kind B2 · utility

Assignee

• Spansion LLC. · US

Inventors

• Patrick K. Cheung · Sunnyvale, US
• Ashok M. Khathuria · San Jose, US

Key dates

• Filing date: May 18, 2007
• Grant date: Jan 12, 2010
• Expiry date: Aug 19, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B99/10

Abstract

An organic polymer memory cell is provided having an organic polymer layer and an electrode layer formed over a first conductive (e.g., copper) layer (e.g., bitline). The memory cells are connected to a second conductive layer (e.g., forming a wordline), and more particularly the top of the electrode layer of the memory cells to the second conductive layer. Optionally, a conductivity facilitating layer is formed over the conductive layer. Dielectric material separates the memory cells. The memory cells are self-aligned with the bitlines formed in the first conductive layer and the wordlines formed in the second conductive layer.