Integrated parallel plate capacitors

US7645675B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Douglas D. Coolbaugh · Highland, US
• Hanyi Ding · Colchester, US
• Ebenezer E. Eshun · South Burlington, US
• Michael D. Gordon · South Burlington, US
• Zhong-Xiang He · South Burlington, US
• Anthony K. Stamper · Williston, US

Key dates

• Filing date: Jan 13, 2006
• Grant date: Jan 12, 2010
• Expiry date: Jan 13, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A parallel plate capacitor formed in the back end of an integrated circuit employs conductive capacitor plates that are formed simultaneously with the other interconnects on that level of the back end (having the same material, thickness, etc). The capacitor plates are set into the interlevel dielectric using the same process as the other interconnects on that level of the back end (preferably dual damascene). Some versions of the capacitors have perforations in the plates and vertical conductive members connecting all plates of the same polarity, thereby increasing reliability, saving space and increasing the capacitive density compared with solid plates.