Wafer and method of producing a substrate by transfer of a layer that includes foreign species

US7645684B2 · kind B2 · utility

Assignees

• S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES · FR
• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Fabrice Letertre · Grenoble, FR
• Yves Mathieu Le Vaillant · Grenoble, FR
• Eric Jalaguier · Meylan, FR

Key dates

• Filing date: Jun 16, 2008
• Grant date: Jan 12, 2010
• Expiry date: Jun 16, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/2258
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of producing a substrate that has a transfer crystalline layer transferred from a donor wafer onto a support. The transfer layer can include one or more foreign species to modify its properties. In the preferred embodiment an atomic species is implanted into a zone of the donor wafer that is substantially free of foreign species to form an embrittlement or weakened zone below a bonding face thereof, with the weakened zone and the bonding face delimiting a transfer layer to be transferred. The donor wafer is preferably then bonded at the level of its bonding face to a support. Stresses are then preferably applied to produce a cleavage in the region of the weakened zone to obtain a substrate that includes the support and the transfer layer. Foreign species are preferably diffused into the thickness of the transfer layer prior to implantation or after cleavage to modify the properties of the transfer layer, preferably its electrical or optical properties. The preferred embodiment produces substrates with a thin InP layer rendered semi-insulating by iron diffusion.