Etch profile control
US7645707B2 · kind B2 · utility
6Cited by
9References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2005 |
| Grant date | Jan 12, 2010 |
| Priority date | — |
| Expiry date | Apr 21, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching a dielectric layer over a substrate and disposed below a mask is provided. The substrate is placed in a plasma processing chamber. An etchant gas comprising O2 and a sulfur component gas comprising at least one of H2S and a compound containing at least one carbon sulfur bond is provided into the plasma chamber. A plasma is formed from the etchant gas. Features are etched into the etch layer through the photoresist mask with the plasma from the etchant gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.