Methods for low temperature oxidation of a semiconductor device
US7645709B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2007 |
| Grant date | Jan 12, 2010 |
| Priority date | — |
| Expiry date | Jul 30, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02252
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. In some embodiments, a method of forming an oxide layer on a semiconductor substrate includes placing a substrate to be oxidized on a substrate support in a vacuum chamber of a plasma reactor, the chamber having an ion generation region remote from the substrate support; introducing a process gas into the chamber, the process gas comprising at least one of hydrogen (H2) and oxygen (O2)—provided at a flow rate ratio of hydrogen (H2) to oxygen (O2) of up to about 3:1—or water vapor (H2O vapor); and generating an inductively coupled plasma in the ion generation region of the chamber to form a silicon oxide layer on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.