Field effect transistor with a fin structure

US7646046B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Christian Russ · Diedorf, DE
• Harald Gossner · Riemerling, DE
• Thomas Schulz · Austin, US

Key dates

• Filing date: Nov 14, 2006
• Grant date: Jan 12, 2010
• Expiry date: Sep 11, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6743

Abstract

A field effect transistor with a fin structure having a first and a second source/drain region; a body region formed within the fin structure and between the first and the second source/drain region; a metallically conductive region formed within a part of the first source/drain region, the metallically conductive region being adjacent to the body region or to a lightly doped region disposed between the body region and the first source/drain region; and a current ballasting region formed within a part of the second source/drain region.