Patent · US Active

Conditioning operations for memory cells

US7646625B2 · kind B2 · utility

10Cited by

1References

27Claims

0Family size

Assignee

Qimonda AG · DE

Inventors

Jan Boris Philipp · Peekskill, US
Thomas Happ · Tarrytown, US
Thomas Nirschl · Putzbrunn, DE

Key dates

Filing date	Jul 17, 2007
Grant date	Jan 12, 2010
Priority date	—
Expiry date	Sep 16, 2027

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/32
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

One embodiment of the invention relates to a method for conditioning resistive memory cells of a memory array with a number of reliable resistance ranges, where each reliable resistance range corresponds to a different data state. In the method, group of at least one resistive memory cell is accessed, which group includes at least one unreliable cell. At least one pulse is applied to the at least one unreliable cell to shift at least one resistance respectively associated with the at least one unreliable cell to the highest of the reliable resistance ranges. Other methods and systems are also disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.