Programmable matrix array with chalcogenide material
US7646630B2 · kind B2 · utility
47Cited by
21References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2005 |
| Grant date | Jan 12, 2010 |
| Priority date | — |
| Expiry date | Nov 21, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/882
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory element, a threshold switching element, or the series combination of a memory element and a threshold switching element may be used for coupling conductive lines in an electrically programmable matrix array. Leakage may be reduced by optionally placing a breakdown layer in series with the phase-change material and/or threshold switching material between the conductive lines. The matrix array may be used in a programmable logic device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.