Substrate processing apparatus, and method for manufacturing semiconductor device
US7648578B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2005 |
| Grant date | Jan 19, 2010 |
| Priority date | — |
| Expiry date | Oct 5, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02197
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A substrate is held by a susceptor (holding tool) in a processing chamber. A plate is provided on a periphery of the substrate. Gas supply ports are constructed to be provided on a side of the substrate and above the plate, and to supply gas to the substrate from a space above the plate. Outlets are provided at least on an upstream side and downstream side of the substrate on the plate, and are adapted to discharge the gas to a space below the plate. An exhaust port communicates with the outlets, and is provided on an opposite side to the gas supply ports with the substrate sandwiched there between and below the plate. The outlets are composed so that conductance of the upstream outlet in a gas flow between the outlets can be larger than conductance of the downstream outlet.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.