Method for manufacturing a semiconductor-on-insulator substrate for microelectronics and optoelectronics
US7648893B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2008 |
| Grant date | Jan 19, 2010 |
| Priority date | — |
| Expiry date | Jun 24, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02664
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor including the steps of supplying a substrate having a support with one face supporting a strained silicon thin layer; forming a first mask on a portion of the strained silicon thin layer; epitaxy of Si1-xGex on the portion of the layer not masked by the first mask; condensating germanium to obtain a strained germanium layer, the strained germanium layer then covered by a silicon oxide layer; eliminating the first mask and of the silicon oxide layer thereby exposing a semi-conducting thin layer; forming a second mask on the semi-conducting thin layer exposed via the previous step, the second mask protecting a region of the exposing a remaining strained germanium portion; epitaxial growing germanium on the remaining strained germanium portion; and removing the second mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.