Method of forming dielectric layer
US7648921B2 · kind B2 · utility
1Cited by
39References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2006 |
| Grant date | Jan 19, 2010 |
| Priority date | — |
| Expiry date | Aug 8, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76837
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a dielectric layer is provided. A first dielectric layer is formed on a substrate having metal layers formed thereon. The first dielectric layer includes overhangs in the spaces between two neighboring metal layers and voids under the overhangs. The first dielectric layer is partially removed to cut off the overhangs and expose the voids and therefore openings are formed. A second dielectric layer is formed on the dielectric layer to fill up the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.