Patent · US Active

Electrostatic chuck assembly

US7649729B2 · kind B2 · utility

41Cited by
27References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 12, 2007
Grant dateJan 19, 2010
Priority date
Expiry dateDec 8, 2027

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/67109
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The present invention generally comprises an electrostatic chuck base, an electrostatic chuck assembly, and a puck for the electrostatic chuck assembly. Precisely etching a substrate within a plasma chamber may be a challenge because the plasma within the chamber may cause the temperature across the substrate to be non-uniform. A temperature gradient may exist across the substrate such that the edge of the substrate is at a different temperature compared to the center of the substrate. When the temperature of the substrate is not uniform, features may not be uniformly etched into the various layers of the structure disposed above the substrate. A dual zone electrostatic chuck assembly may compensate for temperature gradients across a substrate surface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.