Non-volatile memory having a dynamically adjustable soft program verify voltage level and method therefor
US7649782B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2007 |
| Grant date | Jan 19, 2010 |
| Priority date | — |
| Expiry date | Feb 15, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3409
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An erase operation in a non-volatile memory includes selecting a block on which to perform an erase operation, erasing the selected block, receiving test data corresponding to the selected block, determining a soft program verify voltage level based on the test data, and soft programming the erased selected block using the soft program verify voltage level. A non-volatile memory includes a plurality of blocks, a test block which stores test data corresponding to each of the plurality of blocks, and a flash control coupled to the plurality of blocks and the test block, the flash control determining a soft program verify voltage level for a particular block of the plurality of blocks based on the test data for the particular block when the particular block is being soft programmed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.