Processing system and method for treating a substrate
US7651583B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2004 |
| Grant date | Jan 26, 2010 |
| Priority date | — |
| Expiry date | Dec 26, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67751
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A processing system and method for chemical oxide removal, wherein the processing system includes a process chamber having a lower chamber portion configured to chemically treat a substrate and an upper chamber portion configured to thermally treat the substrate, and a substrate lifting assembly configured to transport the substrate between the lower chamber portion and the upper chamber portion. The lower chamber portion includes a chemical treatment environment that provides a temperature controlled substrate holder for supporting the substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. The upper chamber portion includes a thermal treatment environment that provides a heating assembly configured to elevate the temperature of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.