Patent · US Active

Void reduction in indium thermal interface material

US7651938B2 · kind B2 · utility

11Cited by

18References

18Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Seah Sun Too · Sammamish, US
Hsiang Wan Liau · Bukit Mertajam, MY
Janet Kirkland · Fremont, US
Tek Seng Tan · Bayan Lepas, MY
Maxat Touzelbaev · San Jose, US
Raj N. Master · San Jose, US

Key dates

Filing date	Jun 7, 2006
Grant date	Jan 26, 2010
Priority date	—
Expiry date	Dec 26, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/3511
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Thermal interface materials and method of using the same in packaging are provided. In one aspect, a thermal interface material is provided that includes an indium preform that has a first surface and a second surface opposite to the first surface, an interior portion and a peripheral boundary. The indium preform has a channel extending from the peripheral boundary towards the interior portion. The channel enables flux to liberate during thermal cycling.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.