Method for forming strained silicon nitride films and a device containing such films
US7651961B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 30, 2007 |
| Grant date | Jan 26, 2010 |
| Priority date | — |
| Expiry date | Aug 1, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a strained SiN film and a semiconductor device containing the strained SiN film. The method includes exposing the substrate to a gas including a silicon precursor, exposing the substrate to a gas containing a nitrogen precursor activated by a plasma source at a first level of plasma power and configured to react with the silicon precursor with a first reactivity characteristic, and exposing the substrate to a gas containing the nitrogen precursor activated by the plasma source at a second level of plasma power different from the first level and configured to react with the silicon precursor with a second reactivity characteristic such that a property of the silicon nitride film formed on the substrate changes to provide the strained silicon nitride film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.