Non-volatile memory device having improved band-to-band tunneling induced hot electron injection efficiency and manufacturing method thereof
US7652320B2 · kind B2 · utility
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11References
21Claims
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Key dates
| Filing date | Mar 3, 2005 |
| Grant date | Jan 26, 2010 |
| Priority date | — |
| Expiry date | Nov 8, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate having a first conductivity type. The semiconductor substrate includes a first diffusion region having the first conductivity type, a second diffusion region having the first conductivity type, and a channel region between the first diffusion region and the second diffusion region. The device further includes a control gate over the channel region and at least one sub-gate over the first and second diffusion regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.