Inventor · Zhejiang, CN

Min-Ta Wu

4Patents
2h-index
12Co-inventors
41Inventor score

Filing activity: Mar 3, 2005 → Dec 18, 2020

Most-cited inventions

PatentTitleAreaCited byStatus
US8026136B2 Methods of forming low hydrogen concentration charge-trapping layer structures for non-volatile memory Electricity 5 Active
US8022465B2 Low hydrogen concentration charge-trapping layer structures for non-volatile memory Electricity 2 Expired
US12395106B2 Permanent magnet synchronous motor parameter measurement method Electricity 0 Active
US7652320B2 Non-volatile memory device having improved band-to-band tunneling induced hot electron injection efficiency and manufacturing method thereof Electricity 0 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.