Composition comprising rare-earth dielectric
US7655327B2 · kind B2 · utility
9Cited by
35References
2Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 19, 2005 |
| Grant date | Feb 2, 2010 |
| Priority date | — |
| Expiry date | Dec 11, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/173
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Compositions comprising a single-phase rare-earth dielectric disposed on a substrate. Embodiments of the present invention provide the basis for high-K gate dielectrics in conventional integrated circuits and high-K buried dielectrics as part of a semiconductor-on-insulator wafer structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.