Tailoring nitrogen profile in silicon oxynitride using rapid thermal annealing with ammonia under ultra-low pressure
US7658973B2 · kind B2 · utility
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23Claims
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Key dates
| Filing date | Feb 4, 2004 |
| Grant date | Feb 9, 2010 |
| Priority date | — |
| Expiry date | Jul 22, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02255
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a dielectric film that includes nitrogen. The method includes incorporating nitrogen into a dielectric film using a nitridation gas and a rapid thermal annealing process, wherein an ultra-low pressure of equal to or less than about 10 Torr is used for the rapid thermal annealing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.