Method for improving the performance of flash memory by using microcrystalline silicon film as a floating gate
US7659167B2 · kind B2 · utility
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4Claims
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Key dates
| Filing date | Jun 2, 2006 |
| Grant date | Feb 9, 2010 |
| Priority date | — |
| Expiry date | Jan 8, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention provides a method for forming polysilicon by using silane with introducing hydrogen, such that polysilicon is microcrystalline. This microcrystal polysilicon can be applied to floating gate of flash memory to improve the character of flash memory.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.