Plasma immersion ion implantation process with chamber seasoning and seasoning layer plasma discharging for wafer dechucking

US7659184B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Manoj Vellaikal · Sunnyvale, US
• Kartik Santhanam · Fremont, US
• Yen B. Ta · Cupertino, US
• Martin A. Hilkene · Gilroy, US
• Matthew D. Scotney-Castle · معلمی نژاد, US
• Canfeng Lai · Fremont, US
• Peter I. Porshnev · San Jose, US
• Majeed A. Foad · Sunnyvale, US

Key dates

• Filing date: Feb 25, 2008
• Grant date: Feb 9, 2010
• Expiry date: Apr 13, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01J2237/16
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

In a plasma immersion ion implantation process, the thickness of a pre-implant chamber seasoning layer is increased (to permit implantation of a succession of wafers without replacing the seasoning layer) without loss of wafer clamping electrostatic force due to increased seasoning layer thickness. This is accomplished by first plasma-discharging residual electrostatic charge from the thick seasoning layer. The number of wafers which can be processed using the same seasoning layer is further increased by fractionally supplementing the seasoning layer after each wafer is processed, which may be followed by a brief plasma discharging of the supplemented seasoning before processing the next wafer.