Oxidized barrier layer
US7659204B2 · kind B2 · utility
3Cited by
1References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 26, 2007 |
| Grant date | Feb 9, 2010 |
| Priority date | — |
| Expiry date | Jul 11, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and resultant produce of forming barrier layer based on ruthenium tantalum in a via or other vertical interconnect structure through a dielectric layer in a multi-level metallization. The RuTa layer in a RuTa/RuTaN bilayer, which may form discontinuous islands, is actively oxidized, preferably in an oxygen plasma, to thereby bridge the gaps between the islands. Alternatively, ruthenium tantalum oxide is reactive sputtered onto the RuTaN or directly onto the underlying dielectric by plasma sputtering a RuTa target in the presence of oxygen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.