Removal of silicon oxycarbide from substrates
US7659206B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2006 |
| Grant date | Feb 9, 2010 |
| Priority date | — |
| Expiry date | Feb 24, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/461
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of treating a substrate comprises depositing silicon oxycarbide on the substrate and removing the silicon oxycarbide from the substrate. The silicon oxycarbide on the substrate is decarbonized by exposure to an energized oxygen-containing gas that heats the substrate and converts the layer of silicon oxycarbide into a layer of silicon oxide. The silicon oxide is removed by exposure to a plasma of fluorine-containing process gas. Alternatively, the remaining silicon oxide can be removed by a fluorine-containing acidic bath. In yet another version, a plasma of a fluorine-containing gas and an oxygen-containing gas is energized to remove the silicon oxycarbide from the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.