Semiconductor component with MIM capacitor

US7659602B2 · kind B2 · utility

Assignee

• Qimonda AG · DE

Inventors

• Stefan Tegen · Dresden, DE
• Klaus Muemmler · Dresden, DE
• Peter Baars · Dresden, DE
• Odo Wunnicke · Dresden, DE

Key dates

• Filing date: Jun 2, 2008
• Grant date: Feb 9, 2010
• Expiry date: Jun 2, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/714

Abstract

A structure and method of forming a capacitor is described. In one embodiment, the capacitor includes a cylindrical first electrode having an inner portion bounded by a bottom surface and an inner sidewall surface, the first electrode further having an outer sidewall, the first electrode being formed from a conductive material. An insulating fill material is disposed within the inner portion of the first electrode. A capacitor dielectric is disposed adjacent at least a portion of the outer sidewall of the first electrode. A second electrode is disposed adjacent the outer sidewall of the first electrode and separated therefrom by the capacitor dielectric. The second electrode is not formed within the inner portion of the first electrode.