Patent · US Active

Semiconductor device and method of manufacturing the same

US7659635B2 · kind B2 · utility

0Cited by
2References
2Claims
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Assignee

Inventors

Key dates

Filing dateSep 4, 2008
Grant dateFeb 9, 2010
Priority date
Expiry dateSep 4, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/20752
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device of the present invention includes a chip which has a pad; a bump electrode formed on the pad; and a wire whose stitch bonding is made on the bump electrode. The wire satisfies a condition: (modulus-of-elasticity/breaking strength per unit area)≧400.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.