Methods of forming electromigration and thermal gradient based fuse structures
US7662674B2 · kind B2 · utility
8Cited by
2References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 20, 2005 |
| Grant date | Feb 16, 2010 |
| Priority date | — |
| Expiry date | May 20, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a metallic fuse structure by forming at least one via on a first interconnect structure, lining the at least one via with a barrier layer, and then forming a second interconnect structure on the at least one via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.