Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrates
US7662762B2 · kind B2 · utility
2Cited by
51References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2005 |
| Grant date | Feb 16, 2010 |
| Priority date | — |
| Expiry date | Feb 24, 2026 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A semiconductor wafer cleaning formulation, including 1-21% wt. fluoride source, 20-55% wt. organic amine(s), 0.5-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 23-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.