P-channel power MIS field effect transistor and switching circuit
US7663195B2 · kind B2 · utility
26Cited by
5References
17Claims
0Family size
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Key dates
| Filing date | Nov 22, 2005 |
| Grant date | Feb 16, 2010 |
| Priority date | — |
| Expiry date | Nov 22, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a P-channel power MIS field effect transistor formed on a silicon surface having substantially a (110) plane, a gate insulation film is used which provides a gate-to-source breakdown voltage of 10 V or more, and planarizes the silicon surface, or contains Kr, Ar, or Xe.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.