Method of inspecting photomask defect
US7664614B2 · kind B2 · utility
1Cited by
7References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 2, 2007 |
| Grant date | Feb 16, 2010 |
| Priority date | — |
| Expiry date | Jan 23, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/84
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of inspecting defect of a mask is provided. In this method, a database for storing a plurality of virtual simulation models is created. The virtual simulation models are determined by a plurality of factors including an optical effect and a chemical effect during the transferring the pattern of a mask to the photoresist layer on a wafer. A mask defect image is acquired. A simulation contour of the mask defect image is generated from at least one virtual simulation model in the database. Next, the acceptability of the mask is determined.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.