Method for forming pattern
US7666577B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 11, 2008 |
| Grant date | Feb 23, 2010 |
| Priority date | — |
| Expiry date | Dec 11, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76816
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In an exposure step, a combination of a first photomask and a second mask is used. The first mask has a real pattern corresponding to the pattern actually formed on the film to be processed, and a dummy pattern added for controlling pattern pitch in the first photomask within a prescribed range; and the second photomask has a pattern isolating a real-pattern-formed region from a dummy-pattern-formed region. In forming the pattern, after forming a film to be processed on a substrate, a first mask is formed on the film to be processed, by lithography, using the first photomask, and a second mask is formed on the film to be processed, by lithography, using the second photomask. Thereafter, the film to be processed is etched off and removed using the first and second masks as masks to form the pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.